Methods for fabricating semiconductor devices having fin-shaped patterns by selectively removing oxidized fin-shaped patterns

ABSTRACT

A method for fabricating a semiconductor device is provided. The method includes forming a first fin-shaped pattern including an upper part and a lower part on a substrate, forming a second fin-shaped pattern by removing a part of the upper part of the first fin-shaped pattern, forming a dummy gate electrode intersecting with the second fin-shaped pattern on the second fin-shaped pattern, and forming a third fin-shaped pattern by removing a part of an upper part of the second fin-shaped pattern after forming the dummy gate electrode, wherein a width of the upper part of the second fin-shaped pattern is smaller than a width of the upper part of the first fin-shaped pattern and is greater than a width of an upper portion of the third fin-shaped pattern.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority under 35 U.S.C. §119 to Korean PatentApplication No. 10-2015-0012630, filed on Jan. 27, 2015 in the KoreanIntellectual Property Office, the entire content of which isincorporated by reference herein.

BACKGROUND

1. Technical Field

The inventive concepts relate to methods for fabricating semiconductordevices, and more specifically, to methods for fabricating semiconductordevices which adjust a channel shape of a fin-shaped field effecttransistor (FINFET).

2. Description of the Related Art

One technique for increasing the integration density of semiconductordevices is to use multi-gate transistors in which a fin-shapedsemiconductor body is formed on a substrate and a gate is formed on asurface of the semiconductor body. Since such multi-gate transistorsutilize a three-dimensional channel, they may be more readily scaled.Multi-gate transistors also may exhibit improved current controlcapability without increasing the gate length of the transistor.Multi-gate transistors may also reduce or eliminate a short channeleffect (SCE) in which a potential of the channel region is affected bythe drain voltage.

SUMMARY

Aspects of the inventive concepts provide methods for fabricatingsemiconductor devices which may exhibit improved performance byenhancing a width effect through adjustment of a channel shape of afin-shaped field effect transistor (FINFET).

Aspects of the inventive concepts are not limited to the above-mentionedaspects, and other aspects that have not been mentioned will be clearlyunderstood by those skilled in the art from the following description.

According to an aspect of the inventive concepts, there is provided amethod for fabricating a semiconductor device, the method comprisingforming a first fin-shaped pattern that includes an upper part and alower part on a substrate, forming a second fin-shaped pattern byremoving a portion of the upper part of the first fin-shaped pattern,forming a dummy gate electrode that intersects the second fin-shapedpattern on the second fin-shaped pattern, and forming a third fin-shapedpattern by removing a portion of an upper part of the second fin-shapedpattern after forming the dummy gate electrode, wherein a width of theupper part of the second fin-shaped pattern at a first height above alower surface of the substrate is smaller than a width of the upper partof the first fin-shaped pattern at the first height and is greater thana width of an upper portion of the third fin-shaped pattern at the firstheight.

In some embodiments, forming the second fin-shaped pattern includesforming a first oxide film along a profile of the upper part of thefirst fin-shaped pattern, and then removing the first oxide film.

In some embodiments, forming the first oxide film includes oxidizing aportion of the upper part of the first fin-shaped pattern.

In some embodiments, forming the third fin-shaped pattern includesforming a second oxide film along a profile of the upper part of thesecond fin-shaped pattern before forming the dummy gate electrode, andremoving the second oxide film after forming the dummy gate electrode.

In some embodiments, forming the second oxide film includes oxidizing aportion of the upper part of the second fin-shaped pattern.

In some embodiments, the method may further comprise forming a thirdoxide film along a profile of the upper part of the third fin-shapedpattern by oxidizing a portion of the upper part of the third fin-shapedpattern.

In some embodiments, the first fin-shaped pattern includes a sidewall,an upper surface and a corner portion in which the sidewall and theupper surface meet. The method may further comprise rounding the cornerportion by etching the first fin-shaped pattern before forming thesecond fin-shaped pattern.

In some embodiments, the method may further comprise forming a fieldinsulating film on the substrate before rounding the corner portion. Theupper part of the first fin-shaped pattern protrudes above an uppersurface of the field insulating film.

In some embodiments, forming the first fin-shaped pattern includesforming a fourth fin-shaped pattern including an upper part and a lowerpart on a substrate, forming a field insulating film that directlycontacts the lower part of the fourth fin-shaped and that does notdirectly contact the upper part of the fourth fin-shaped pattern, andremoving a portion of the upper part of the fourth fin-shaped patternafter forming the field insulating film.

In some embodiments, forming the first fin-shaped pattern includesforming an oxide film along a profile of the upper part of the fourthfin-shaped pattern, and removing the oxide film.

In some embodiments, the width of the upper part of the first fin-shapedpattern at the first height is smaller than a width of the upper part ofthe fourth fin-shaped pattern at the first height.

In some embodiments, the fourth fin-shaped pattern includes a sidewall,a upper surface and a corner portion in which the sidewall and the uppersurface meet. The method may further comprise rounding the cornerportion by etching the fourth fin-shaped pattern before forming thefirst fin-shaped pattern.

In some embodiments, the method may further comprise forming a gateelectrode that intersects the third fin-shaped pattern on the thirdfin-shaped pattern. The forming of the gate electrode includes forming atrench by removing the dummy gate electrode, and forming a conductivematerial in the trench after forming the third fin-shaped pattern.

In some embodiments, forming of the first fin-shaped pattern includesforming a field insulating film on the substrate, the field insulatingfilm directly contacting the lower part of the first fin-shaped patternand not directly contacting the upper part of the first fin-shapedpattern.

In some embodiments, forming of the second fin-shaped pattern includesmodifying a profile of sidewalls of the first fin-shaped pattern to formthe second fin-shaped pattern, and forming of the third fin-shapedpattern includes modifying a profile of sidewalls of the secondfin-shaped pattern to form the third fin-shaped pattern.

In some embodiments, the method may further comprise forming recesses inthe second fin-shaped pattern by etching both sides of the dummy gateelectrode, and then forming source/drains in the respective recessesprior to forming the third fin-shaped pattern.

According to another aspect of the inventive concepts, there is provideda method for fabricating a semiconductor device, the method comprisingforming a first fin-shaped pattern which includes an upper part thatprotrudes above an upper surface of a field insulating film, and a lowerpart that is surrounded by the field insulating film, etching cornerportions of the first fin-shaped pattern at which an upper surface andsidewalls of the first fin-shaped pattern meet to round the cornerportions of the first fin-shaped pattern, forming a second fin-shapedpattern by modifying a profile of the sidewalls of the first fin-shapedpattern that includes the rounded corner portion, forming a dummy gateelectrode that intersects the second fin-shaped pattern on the secondfin-shaped pattern, and forming a third fin-shaped pattern by modifyinga profile of sidewalls of the second fin-shaped pattern that verticallyoverlap the dummy gate electrode.

In some embodiments, forming the second fin-shaped pattern includesforming a first oxide film along the profile of the upper part of thefirst fin-shaped pattern that includes the rounded corner portion byoxidizing a portion of the upper part of the first fin-shaped pattern,and removing the first oxide film.

In some embodiments, forming the third fin-shaped pattern includesforming a second oxide film along a profile of an upper part of thesecond fin-shaped pattern by oxidizing a portion of the upper part ofthe second fin-shaped pattern before forming the dummy gate electrode,and removing at least a portion of the second oxide film after formingthe dummy gate electrode to form the third fin-shaped pattern.

In some embodiments, the method may further comprise forming a trenchexposing the portion of the second oxide film by removing the dummy gateelectrode prior to removing at least a portion of the second oxide film.

In some embodiments, the method may further comprise forming a thirdoxide film along a profile of the third fin-shaped pattern that isexposed by the trench, and forming a gate electrode in the trench on thethird oxide film.

In some embodiments, a width of an upper part of the second fin-shapedpattern at a first height above a lower surface of the substrate issmaller than a width of the upper part of the first fin-shaped patternat the first height and is greater than a width of an upper part of thethird fin-shaped pattern at the first height.

According to still another aspect of the inventive concepts, there isprovided a method for fabricating a semiconductor device, the methodcomprising forming a first fin-shaped pattern including an upper partand a lower part on a substrate, forming a first oxide film along aprofile of the first fin-shaped pattern by oxidizing a portion of thefirst fin-shaped pattern, forming a second fin-shaped pattern byremoving the first oxide film, forming a second oxide film along aprofile of the second fin-shaped pattern by oxidizing a portion of thesecond fin-shaped pattern, and forming a first gate electrode thatintersects the second fin-shaped pattern on the second oxide film.

In some embodiments, forming the first fin-shaped pattern includesforming a field insulating film on the substrate, the field insulatingfilm directly contacting the lower part of the fin-shaped pattern andnot directly contacting the upper part of the first fin-shaped pattern.

In some embodiments, the first oxide film is formed along the profile ofthe upper part of the first fin-shaped pattern, and the second oxidefilm is formed along the profile of the upper part of the secondfin-shaped pattern.

In some embodiments, the method may further comprise etching a cornerportion of the first fin-shaped pattern at which an upper surface and asidewall of the first fin-shaped pattern meet to round the cornerportion of the first fin-shaped pattern prior to forming the first oxidefilm.

In some embodiments, forming the first fin-shaped pattern includesforming a fourth fin-shaped pattern including an upper part and a lowerpart on the substrate, forming a field insulating film that directlycontacts the lower part of the fourth fin-shaped pattern and that doesnot directly contact the upper part of the fourth fin-shaped pattern,forming a fourth oxide film along a profile of the fourth fin-shapedpattern by oxidizing a portion of the fourth fin-shaped pattern afterforming the field insulating film, and removing the fourth oxide film.

In some embodiments, the fourth oxide film is formed along the profileof the upper part of the fourth fin-shaped pattern.

In some embodiments, the method may further comprise etching a cornerportion at which an upper surface and a sidewall of the fourthfin-shaped pattern meet to round the corner portion of the fourthfin-shaped pattern prior to forming the fourth oxide film.

In some embodiments, a width of the upper part of the first fin-shapedpattern at a first height above a lower surface of the substrate issmaller than a width of the upper part of the fourth fin-shaped patternat the first height and is greater than a width of an upper part of thesecond fin-shaped pattern at the first height.

In some embodiments, the method may further comprise forming a trenchexposing the second oxide film by removing the first gate electrode, andforming a conductive material which fills the trench.

In some embodiments, the method may further comprise forming a thirdfin-shaped pattern by removing the second oxide film which is exposed bythe trench, and forming a third oxide film along a profile of the thirdfin-shaped pattern which is exposed by the trench.

In some embodiments, forming the third oxide film includes oxidizing aportion of the third fin-shaped pattern.

According to still another aspect of the inventive concepts, there isprovided a method for fabricating a semiconductor device, the methodcomprising forming a first fin-shaped pattern including an upper partand a lower part in a first region on a substrate, and forming a secondfin-shaped pattern including an upper part and a lower part in a secondregion on the substrate, forming a third fin-shaped pattern by removinga portion of the upper part of the first fin-shaped pattern, forming afourth fin-shaped pattern by removing a portion of the upper part of thesecond fin-shaped pattern, forming a first oxide film along a profile ofthe third fin-shaped pattern by oxidizing a portion of an upper part ofthe third fin-shaped pattern, forming a second oxide film along aprofile of the fourth fin-shaped pattern by oxidizing a portion of anupper part of the fourth fin-shaped pattern, forming a mask pattern onthe first region of the substrate, the mask pattern covering the thirdfin-shaped pattern with the first oxide film thereon, forming a fifthfin-shaped pattern by removing the second oxide film, forming a thirdoxide film along a profile of the fifth fin-shaped pattern by oxidizinga portion of an upper part of the fifth fin-shaped pattern, removing themask pattern, and then forming a first dummy gate electrode thatintersects the third fin-shaped pattern on the first oxide film andforming a second dummy gate electrode that intersects the fifthfin-shaped pattern on the third oxide film, and after forming the firstand second dummy gate electrodes, forming a sixth fin-shaped pattern byremoving at least a portion of the first oxide film and forming aseventh fin-shaped pattern by removing at least a portion of the thirdoxide film.

In some embodiments, forming the third fin-shaped pattern comprisesforming a fourth oxide film along a profile of the upper part of thefirst fin-shaped pattern and then removing the fourth oxide film, andwherein forming the fourth fin-shaped pattern includes forming a fifthoxide film along a profile of the upper part of the second fin-shapedpattern, and then removing the fifth oxide film.

In some embodiments, the first fin-shaped pattern includes sidewalls, anupper surface and corner portions at which the sidewalls and the uppersurface of the first fin-shaped pattern meet, and the second fin-shapedpattern includes sidewalls, an upper surface and corner portions atwhich the sidewalls and the upper surface of the second fin-shapedpattern meet. The method may further comprise before forming the thirdfin-shaped pattern and the fourth fin-shaped pattern, rounding thecorner portions of the first fin-shaped pattern and the corner portionsof the second fin-shaped pattern.

In some embodiments, the method may further comprise before rounding thecorner portion of the first fin-shaped pattern and the corner portion ofthe second fin-shaped pattern, forming a field insulating film on thesubstrate. The upper part of the first fin-shaped pattern and the upperpart of the second fin-shaped protrude above an upper surface of thefield insulating film.

In some embodiments, forming the sixth fin-shaped pattern and theseventh fin-shaped pattern includes forming a first trench and a secondtrench which expose each of the first oxide film and the third oxidefilm, by removing the first dummy gate electrode and the second dummygate electrode, and removing the first oxide film and the third oxidefilm which are exposed by the respective first and second trenches.

In some embodiments, the method may further comprise forming a fourthoxide film and a fifth oxide film along respective profiles of an upperpart of the sixth fin-shaped pattern and an upper part of the seventhfin-shaped pattern, and forming a first gate electrode filling the firsttrench on the fourth oxide film and a second gate electrode filling thesecond trench on the fifth oxide film.

According to still another aspect of the inventive concepts, there isprovided a method for fabricating a semiconductor device, the methodcomprising forming a first fin-shaped pattern and a field insulatingfilm on a substrate, the field insulating film covering a lower part ofthe first fin-shaped pattern and an upper part of the first fin-shapedpattern protruding above the field insulating film; converting an outerportion of the upper part of the first fin-shaped pattern into a firstoxide film; forming a second fin-shaped pattern by removing the firstoxide film; converting an outer portion of an upper part of the secondfin-shaped pattern that is exposed by the field insulating film into asecond oxide film; and forming a third fin-shaped pattern by removing atleast a portion of the second oxide film. A width of the upper part ofthe second fin-shaped pattern at a first height above a lower surface ofthe substrate is smaller than a width of the upper part of the firstfin-shaped pattern at the first height and is greater than a width of anupper portion of the third fin-shaped pattern at the first height, and asecond height of the second fin-shaped pattern above a lower surface ofthe substrate is smaller than a first height of the first fin-shapedpattern above the lower surface of the substrate and is greater than athird height of the third fin-shaped pattern above the lower surface ofthe substrate.

In some embodiments, the third fin-shaped pattern may extend in a firstdirection, and the method may further include forming an electrodestructure on the substrate that extends in a second direction thatcrosses the first direction.

In some embodiments, a width of a lower part of the third fin-shapedpattern may be greater than a width of a top part of the thirdfin-shaped pattern and may be equal to a width of a lower part of thesecond fin-shaped pattern.

In some embodiments, the method may further include forming a dummy gateelectrode that intersects the second fin-shaped pattern and then formingspacers on sidewalls of the dummy gate electrode and on the second oxidefilm. In such embodiments, removing at least the portion of the secondoxide film may comprise removing the portion of the second oxide filmthat is exposed by the spacers.

In some embodiments, the method may further include rounding cornerportions of at least one of the first through third fin-shaped patterns.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects and features of the inventive concepts willbecome more apparent by the following detailed description of exemplaryembodiments thereof with reference to the attached drawings, in which:

FIGS. 1A to 14C are intermediate-stage diagrams illustrating a methodfor fabricating a semiconductor device according to an embodiment of theinventive concepts;

FIGS. 15 to 17B are intermediate-stage diagrams illustrating a methodfor fabricating a semiconductor device according to another embodimentof the inventive concepts;

FIGS. 18 to 30 are intermediate-stage diagrams illustrating a method forfabricating a semiconductor device according to still another embodimentof the inventive concepts;

FIG. 31 is a block diagram of a memory card including a semiconductordevice fabricated using a fabrication method according to embodiments ofthe inventive concepts;

FIG. 32 is a block diagram of an information processing system includinga semiconductor device fabricated using a fabrication method accordingto embodiments of the inventive concepts; and

FIG. 33 is a block diagram of an electronic device including asemiconductor device fabricated using a fabrication method according toembodiments of the inventive concepts.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The inventive concepts will now be described more fully hereinafter withreference to the accompanying drawings, in which example embodimentsthereof are shown. The inventive concepts may, however, be embodied inmany different forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope of the inventive concepts to those skilled in the art.The same reference numbers indicate the same components throughout thespecification and drawings. In the attached figures, the thickness ofsome layers and regions may be exaggerated for clarity.

It will be understood that when an element or layer is referred to asbeing “on,” “connected to,” or “coupled to” another element or layer, itcan be directly on, connected to or coupled to another element or layeror intervening elements or layers may be present. In contrast, when anelement is referred to as being “directly on,” “directly connected to”or “directly coupled to” another element or layer, there are nointervening elements or layers present. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Thus, for example, a first element orcomponent discussed below could be termed a second element or componentwithout departing from the teachings of the inventive concepts.

The use of the terms “a” and “an” and “the” and similar referents in thecontext of describing the inventive concepts (especially in the contextof the following claims) are to be construed to cover both the singularand the plural, unless otherwise indicated herein or clearlycontradicted by context. The terms “comprising,” “having,” “including,”and “containing” are to be construed as open-ended terms (i.e., meaning“including, but not limited to,”) unless otherwise noted.

Unless defined otherwise, all technical and scientific terms used hereinhave the same meaning as commonly understood by one of ordinary skill inthe art to which the inventive concepts belong. It is noted that the useof any and all examples, or exemplary terms provided herein is intendedmerely to better illuminate the inventive concepts and is not alimitation on the scope of the inventive concepts unless otherwisespecified.

A method for fabricating a semiconductor device according to anembodiment of the inventive concepts will be described with reference toFIGS. 1A to 14C, which illustrate intermediate structures that areformed during the method for fabricating a semiconductor device.

For reference, FIG. 1B is a cross-sectional view taken along a line A-Aof FIG. 1A, and FIG. 3B is a cross-sectional view taken along a line A-Aof FIG. 3A. FIG. 8B is a cross-sectional view taken along a line A-A ofFIG. 8A, and FIG. 9B is a cross-sectional view taken along a line B-B ofFIG. 9A. FIGS. 10Bb and 11B are cross-sectional views taken along a lineB-B of FIGS. 10A and 11A, respectively. FIGS. 12Bb and 12Cc arecross-sectional views taken along a line A-A and a line B-B of FIG. 12A,respectively, and FIGS. 13B and 13C are cross-sectional views takenalong a line A-A and a line B-B of FIG. 13A, respectively. FIGS. 14B and14Cc are cross-sectional views taken along a line A-A and a line B-B ofFIG. 14A, respectively.

Referring to FIGS. 1A and 1B, first mask patterns 2001 that extend in afirst direction X1 are formed on a substrate 100.

The substrate 100 can be, for example, a silicon substrate, bulk siliconor a SOI (silicon-on-insulator). In other embodiments, the substrate 100can include, for example, another semiconductor such as germanium, ormay be a compound semiconductor such as a group IV-IV compoundsemiconductor or a group III-V compound semiconductor. The substrate 100can also be an element in which an epilayer is formed on a basesubstrate.

Taking the group IV-IV compound semiconductor as an example, thesubstrate 100 may be a binary compound or a ternary compound containingat least two or more of carbon (C), silicon (Si), germanium (Ge), andtin (Sn), or a compound obtained by doping these compounds with a groupIV element.

Taking the group III-V compound semiconductor as an example, thesubstrate 100 may be a binary compound, a ternary compound or aquaternary compound formed, by binding at least one of aluminum (Al),gallium (Ga), and indium (In) as a group III element with one ofphosphorus (P), arsenic (As) and antimonium (Sb) as a group V element.

In the method for fabricating the semiconductor device according to theembodiment of the inventive concepts, the substrate 100 will bedescribed to be a silicon substrate.

The first mask pattern 2001 may include, for example, silicon oxide,silicon nitride, silicon oxynitride, a metal film, a photoresist, SOG(Spin On Glass) or SOH (Spin On Hard mask), but is not limited to thesematerials.

Referring to FIG. 2, a part of the substrate 100 may be etched using thefirst mask patterns 2001 as an etching mask. By etching portions of thesubstrate 100 that are not covered by the first mask patterns 2001 oneor more first trenches 2101 may be formed in the substrate 100.

By etching the substrate 100 in the manner described above, firstfin-shaped patterns 110 can be formed on the substrate 100. Since thefirst fin-shaped patterns 110 are formed using the first mask patterns2001 as an etching mask, the first fin-shaped patterns 110 may extend inthe first direction X1 like the first mask patterns 2001.

The first mask patterns 2001 may remain on the respective firstfin-shaped patterns 110.

Referring to FIGS. 3A and 3B, a pre-field insulating film 105P is formedon the substrate to fill the first trenches 2101.

The pre-field insulating film 105P can include, for example, at leastone of a silicon oxide film, a silicon nitride film and a siliconoxynitride film. The pre-field insulating film 105P can be formed by,for example, physical vapor deposition (PVD), chemical vapor deposition(CVD), atomic layer deposition (ALD) or a combination thereof.

Through a flattening process such as for example, a chemical-mechanicalpolishing process, the upper surface of the first fin-shaped pattern 110and the upper surface of the pre-field insulating film 105P can beplaced on the same plane. The first mask patterns 2001 can be removed bythe flattening process, but embodiments of the inventive concepts arenot limited thereto. For example, in other embodiments, the first maskpatterns 2001 may be removed before forming the pre-field insulatingfilm 105P or may be removed after a recess process is performed which isdescribed below with reference to FIG. 4.

Referring to FIG. 4, upper portions of the first fin-shaped patterns 110may be exposed by recessing the upper part of the pre-field insulatingfilm 105P to form a field insulating film 105.

The recess process may be a selective etching process. By removing aportion of the pre-field insulating film 105P, the first fin-shapedpatterns 110 may protrude upwardly from the upper surface of the fieldinsulating film 105.

Each first fin-shaped pattern 110 can include a lower part 112 and anupper part 111 that is above the lower part 112. The lower part 112 ofeach first fin-shaped pattern may directly contact the field insulatingfilm 105 and may be surrounded by the field insulating film 105. Theupper part 111 of each first fin-shaped pattern may not directly contactthe field insulating film 105. In other words, the portion of each firstfin-shaped pattern 110 that protrudes upwardly from the upper surface ofthe field insulating film 105 comprises the upper part 111 of each firstfin-shaped pattern 110.

It will also be appreciated that in other embodiments the upper parts111 of the first fin-shaped patterns 110 may be formed by an epitaxialprocess as opposed to be a recess process. In such embodiments, afterforming the pre-field insulating film 105P of FIGS. 3A and 3B, anepitaxial process is performed using the exposed upper surface of thefirst fin-shaped pattern 110 as a seed to form the upper parts 111 ofthe first fin-shaped patterns 110 that protrude upwardly from the uppersurface of the pre-field insulating film 105P can be formed. In suchembodiments, the pre-field insulating film 105P may have a planar uppersurface.

The first fin-shaped patterns 110 may also be doped to adjust thethreshold voltage of the transistors formed thereof. In a case where thesemiconductor device is an NMOS fin-shaped transistor, the impurity ionsthat are doped into the first fin-shaped patterns 110 may be boron (B),and in a case of a PMOS fin-shaped transistor, the impurity ions thatare doped into the first fin-shaped patterns may be phosphorus (P) orarsenic (As).

The doping for adjustment of the threshold voltage may be performedafter exposing the upper part 111 of the first fin-shaped pattern 110.

A height of the upper part 111 of each first fin-shaped pattern 110 thatprotrudes above the upper surface of the field insulating film 105 canbe 2H. A width of the first fin-shaped pattern 110 at a point that ishalf the height of the upper part 111 may be W1. In other words, at aheight H1 above the lowermost part of the first fin-shaped pattern 110or an upper surface of the substrate 100, the width of the firstfin-shaped pattern 110 in the second direction Y1 in FIG. 3A may be afirst width W1.

The first fin-shaped pattern 110 includes an upper surface 110U, asidewall 110S, and a corner portion 110C at which the upper surface 110Uand the sidewall 110S meet. In FIG. 4, the corner portion 110C of thefirst fin-shaped pattern may have an angular shape.

Referring to FIG. 5, the corner portion 110C of the first fin-shapedpattern may be rounded by etching the first fin-shaped pattern 110. Thatis, it is possible to etch the corner portion 110C of the firstfin-shaped pattern to have a rounded shape.

At a height H1 above the lowermost part of the first fin-shaped pattern110, a corrected first width of the first fin-shaped pattern 110 withthe rounded corner portion can be W11.

In FIGS. 4 and 5, at the height H1 above the lowermost part of the firstfin-shaped pattern 110, the width W1 of the first fin-shaped pattern 110before the rounding of the corner portion has been illustrated as beingsubstantially the same as the width W11 of the first fin-shaped pattern110 after the rounding of the corner portion, but embodiments of theinventive concepts are not limited thereto.

That is, it is a matter of course that the upper part 111 of the firstfin-shaped pattern can be partially etched while rounding the cornerportion 110C of the first fin-shaped pattern. In such a case, the widthW1 of the first fin-shaped pattern 110 before the rounding of the cornerportion may be greater than the width W11 of the first fin-shapedpattern after the rounding of the corner portion 110.

In the discussion that follows, the width W1 of the first fin-shapedpattern 110 before the rounding is the same as the width W11 of thefirst fin-shaped pattern 110 after the rounding.

Referring to FIG. 6, a first oxide film 115 may be formed along theprofile of the first fin-shaped pattern 110.

The first oxide film 115 may be formed along the profile of the upperpart 111 of the first fin-shaped pattern that protrudes above the uppersurface of the field insulating film 105. The first oxide film 115 maybe formed along the profile of the upper part 111 of the firstfin-shaped pattern including the rounded corner portion.

The first oxide film 115 may be formed by oxidizing the upper part 111of the first fin-shaped pattern 110 that has the rounded corner portion.

The first oxide film 115 may be formed using for example, chemicaloxidation, ultraviolet oxidation, dual plasma oxidation, thermaloxidation, chemical vapor deposition, atomic layer deposition or thelike. When the first oxide film 115 is formed using the chemical vapordeposition, the atomic layer deposition or the like, a part of the firstfin-shaped pattern 110 may be oxidized.

The first oxide film 115 may be formed to cure, for example, surfacedefects such as charge trap sites of the first fin-shaped pattern 110that may be generated during the formation of the first fin-shapedpattern 110.

Referring to FIG. 7, a second fin-shaped pattern 120 that protrudesabove the upper surface of the field insulating film 105 may be formedby removing the first oxide film 115.

The first oxide film 115 may be removed using an etching process or thelike. The first oxide film 115 may be removed using, for example, achemical oxide removal method (COR), Siconi or descum.

The second fin-shaped pattern 120 may include a lower part 122 and anupper part 121 that is above the lower part 122. The lower part 122 ofthe second fin-shaped pattern 120 may directly contact the fieldinsulating film 105 and may be surrounded by the field insulating film105. The upper part 121 of the second fin-shaped pattern 120 may notdirectly contact the field insulating film 105.

When not considering the removal of a portion of the field insulatingfilm 105 during removal of the first oxide film 115, the lower part 122of the second fin-shaped pattern 120 may be substantially the same asthe lower part 112 of the first fin-shaped pattern 110.

At a height H1 above the lowermost part of the second fin-shaped pattern120, the width of the second fin-shaped pattern 120 may be a secondwidth W2. The width W2 of the second fin-shaped pattern 120 may benarrower than the width W1 of the first fin-shaped pattern 110 beforethe rounding and the width W11 of the first fin-shaped pattern 110 afterthe rounding.

In other words, the width W2 of the upper part 121 of the secondfin-shaped pattern 120 may be narrower than the width W1 of the upperpart 111 of the first fin-shaped pattern 110 before the rounding and thewidth W11 of the upper part 111 of the first fin-shaped pattern 110after the rounding.

With reference to FIGS. 6 and 7, second fin-shaped pattern 120 may beformed by removing a portion of the upper part 111 of the firstfin-shaped pattern.

In other words, during the forming and removing of the first oxide film115, the profile of the sidewall 110S of the first fin-shaped pattern110 changes. Therefore, the second fin-shaped pattern 120 can be formedby modifying the profile of the sidewall 110S of the first fin-shapedpattern including the rounded corner portion.

The sidewall 120S of the second fin-shaped pattern may include a firstinflection point 120P.

Referring to FIGS. 8A and 8B, a second oxide film 125 may be formedalong the profile of the upper part 121 of the second fin-shaped pattern120 that protrudes above the upper surface of the field insulating film105.

The second oxide film 125 may be formed by oxidizing a portion of thesecond fin-shaped pattern 120. For example, the second oxide film 125may be formed by oxidizing a portion of the upper part 121 of the secondfin-shaped pattern 120.

The second oxide film 125 may be formed using, for example, chemicaloxidation, ultraviolet oxidation, dual plasma oxidation, thermaloxidation, chemical vapor deposition or an atomic layer deposition.

Subsequently, a first dummy gate electrode 205 may be formed. Inparticular, a dummy gate electrode layer may be formed, and a maskpattern 2002 may be formed on the first dummy gate electrode layer. Thefirst dummy gate electrode layer may then be etched using the mask 2002as an etching mask to form the first dummy gate electrode 205. The firstdummy gate electrode 205 may extend in the second direction Y1 tointersect the second fin-shaped pattern 120.

The first dummy gate electrode 205 is formed on the second fin-shapedpattern 120 and on the second oxide film 125 that is formed along theprofile of the upper part 121 of the second fin-shaped pattern 120.

The first dummy gate electrode 205 may include, for example,polysilicon, amorphous silicon or the like. The second mask pattern 2002may include, for example, silicon oxide, silicon nitride, siliconoxynitride or the like.

In FIGS. 8A and 8B, the second oxide film 125 is illustrated as beingexposed on both sides of the first dummy gate electrode 205, butembodiments of the inventive concepts are not limited thereto. Forexample, in other embodiments, during the etching process that is usedto form the first dummy gate electrode 205, the second oxide film 125which does not vertically overlap the first dummy gate electrode 205 maybe removed. Herein, a first structure that is formed on an underlyingsubstrate “vertically overlaps” a second structure that is formed on thesubstrate if a line that is perpendicular to a plane defined by the topsurface of the substrate bisects both the first and second structures.

In the method for fabricating the semiconductor device according to theembodiment of the inventive concepts, the first dummy gate electrode 205is described as being a replacement gate electrode, but it is notlimited thereto.

In other words, it is a matter of course that the gate electrode can beformed using a material which will be used as a gate electrode of thetransistor rather than a dummy gate electrode. It will also beunderstood that a high dielectric constant gate insulating film can beformed between the second oxide film 125 and the gate electrode.

Referring to FIGS. 9A and 9B, a first gate spacer 210 may be formed onthe sidewalls of the first dummy gate electrode 205.

After forming an insulating film which covers the first dummy gateelectrode 205 and the second fin-shaped pattern 120, the first gatespacer 210 can be formed by etching the insulating film. The first gatespacer 210 may include, for example, at least one of silicon nitride(SiN), silicon oxynitride (SiON), silicon oxide (SiO₂), siliconoxycarbonitride (SiOCN) or a combination thereof.

Subsequently, a recess 155 may be formed in the second fin-shapedpattern 120 by removing a portion of the second fin-shaped pattern 120that are exposed on both sides of the first dummy gate electrode 205.The upper surface of the second fin-shaped pattern 120 that is exposedby the field insulating film 105 can be disposed on the same plane asthe upper surface of the field insulating film 105, but embodiments ofthe inventive concepts are not limited thereto.

Referring to FIGS. 10A and 10B, source/drains 150 may be formed on thesecond fin-shaped pattern 120 on each side of the first dummy gateelectrode 205.

The source/drains 150 may be formed by filling the recess 155. Thesource/drains 150 may be formed by an epitaxial process. Thesource/drains 150 may be, for example, elevated source/drains.

When the semiconductor device is a PMOS transistor, the source/drains150 may include a compressive stress material. For example, thecompressive stress material may be a material having a lattice constantgreater than Si, and may be, for example, SiGe. The compressive stressmaterial may improve the mobility of carriers in the channel region byapplying compressive stress to the second fin-shaped pattern 120(consequently, the third fin-shaped pattern 130).

Alternatively, when the semiconductor device is an NMOS transistor, thesource/drains 150 may include a tensile stress material. For example,when the second fin-shaped pattern 120 is silicon, the source/drains 150may be a material (e.g., SiC) having a lattice constant smaller thansilicon. For example, the tensile stress material may improve themobility of carriers in the channel region by applying tensile stress tothe second fin-shaped pattern 120 (consequently, the third fin-shapedpattern 130).

In FIG. 10A, although the sources/drains 150 adjacent to each other inthe second direction Y1 are illustrated as being spaced apart from eachother rather than being in contact with each other, this is merely forconvenience of explanation, and embodiments of the invention are notlimited thereto. It is a matter of course that the sources/drains 150that are adjacent to each other in the second direction Y1 may be incontact with each other.

Referring to FIGS. 11A and 11B, an etch stop film 170 is formed thatcovers the source/drains 150 and the first dummy gate electrode 205. Aninterlayer insulating film 180 which covers the source/drains 150 andthe first dummy gate electrode 205 may be formed on the etch stop film170.

Subsequently, a planarization operation may be performed on theinterlayer insulating film 180 until the upper surface of the firstdummy gate electrode 205 is exposed. The second mask pattern 2002 may beremoved through this planarization operation.

The etch stop film 170 may include, for example, at least one of siliconnitride (SiN), silicon oxynitride (SiON), silicon oxide (SiO₂), siliconoxycarbonitride (SiOCN), silicon carbonitride (SiCN) or a combinationthereof.

The etch stop film 170 may be formed by, for example, physical vapordeposition (PVD), chemical vapor deposition (CVD), atomic layerdeposition (ALD) and/or a combination thereof.

The interlayer insulating film 180 may include, for example, one ofsilicon oxide, silicon nitride, silicon oxynitride, TEOS (Tetra EthylOrtho Silicate), FOX (Flowable Oxide), TOSZ (Tonen SilaZen), USG(Undoped Silica Glass), BSG (Borosilica Glass), PSG (PhosphoSilicaGlass), BPSG (BoroPhosphoSilica Glass), PETEOS (Plasma Enhanced TetraEthyl Ortho Silicate) or a low dielectric constant material. The lowdielectric constant material may include, for example, FSG (FluorideSilicate Glass), CDO (Carbon Doped silicon Oxide), Xerogel, Aerogel,Amorphous Fluorinated Carbon, OSG (Organo Silicate Glass), Parylene, BCB(bis-benzocyclobutenes), SiLK, polyimide, porous polymeric material orthe like.

The interlayer insulating film 180 can be formed by, for example,physical vapor deposition (PVD), chemical vapor deposition (CVD), atomiclayer deposition (ALD), a coating or a combination thereof.

Referring to FIGS. 12A to 12C, a second trench 2102 extending in thesecond direction Y1 may be formed by removing the first dummy gateelectrode 205.

Side surfaces of the second trench 2102 may be defined by the sidewallsof the first gate spacer 210.

As the second trench 2102 is formed, the field insulating film 105 isexposed, and the second oxide film 125 formed along the profile of theupper part 121 of the second fin-shaped pattern may be exposed.

Referring to FIGS. 13A to 13C, a third fin-shaped pattern 130 thatprotrudes above the upper surface of the field insulating film 105 isformed by removing the second oxide film 125.

Specifically, the third fin-shaped pattern 130 is formed by removing aportion of the second oxide film 125 that is exposed by the secondtrench 2102. The remainder of the second oxide film 125 that isunderneath the first gate spacer 210 may remain. That is, the thirdfin-shaped pattern 130 can include the remainder of the second oxidefilm 125 that is underneath the first gate spacer 210.

The second oxide film 125 can be removed using, for example, an etchingprocess or the like. The second oxide film 125 can be removed, forexample, using a chemical oxide removal method (COR), Siconi or descum,but the removal techniques are not limited thereto.

The third fin-shaped pattern 130 may include a lower part 132 and anupper part 131 that is above the lower part 132. The lower part 132 ofthe third fin-shaped pattern 130 may directly contact the fieldinsulating film 105 and may be surrounded by the field insulating film105. The upper part 131 of the third fin-shaped pattern may not directlycontact the field insulating film 105.

When not considering the disappearance of the field insulating film 105during removal of the second oxide film 125, the lower part 132 of thethird fin-shaped pattern 130 can be substantially the same as the lowerpart 122 of the second fin-shaped pattern 120.

A width of the third fin-shaped pattern 130 at a distance H1 above thelowermost part of the third fin-shaped pattern 130 may be a third widthW3. The width W3 of the third fin-shaped pattern 130 may be narrowerthan the width W2 of the second fin-shaped pattern 120 and may benarrower than the width W1 of the first fin-shaped pattern 110 beforethe rounding and the width W11 of the first fin-shaped pattern 110 afterthe rounding.

In other words, the width W3 of the upper part 131 of the thirdfin-shaped pattern 130 may be narrower than the width W1 of the upperpart 111 of the first fin-shaped pattern 110 before rounding, the widthW11 of the upper part 111 of the first fin-shaped pattern 110 afterrounding, and the width W2 of the upper part 121 of the secondfin-shaped pattern 120.

With reference to FIGS. 8A, 8B and 13A to 13C, the third fin-shapedpattern 130 may be formed by removing a portion of the upper part 121 ofthe second fin-shaped pattern 120.

In other words, in the course of forming and removing the second oxidefilm 125, the profile of the sidewall 120S of the second fin-shapedpattern 120 changes. Therefore, the third fin-shaped pattern 130 may beformed by modifying the profile of the sidewall 120S of the secondfin-shaped pattern 120. The third fin-shaped pattern 130 may be formedby modifying the profile of the sidewall 120S of the second fin-shapedpattern that vertically overlaps the first dummy gate electrode 205.

The sidewall 130S of the third fin-shaped pattern 130 may include asecond inflection point 130P.

Referring to FIGS. 14A to 14C, a third oxide film 135 may be formedalong the profile of the third fin-shaped pattern 130 that is exposed bythe second trench 2102. The third oxide film 135 may be formed along theprofile of the upper part 131 of the third fin-shaped pattern thatprotrudes above the upper surface of the field insulating film 105.

The third oxide film 135 may be formed by oxidizing an exposed part ofthe third fin-shaped pattern 130. For example, the third oxide film 135may be formed by oxidizing a portion of the upper part 131 of the thirdfin-shaped pattern 130.

The third oxide film 135 can be formed by, for example, chemicaloxidation, UV oxidation, dual plasma oxidation, thermal oxidation,chemical vapor deposition, atomic layer deposition or the like.

Subsequently, a first high dielectric constant insulating film 215 maybe formed along the sidewall and the bottom surface of the second trench2102. The first high dielectric constant insulating film 215 may beformed along the profiles of the field insulating film 105 and theportion of the third fin-shaped pattern 130 that protrudes above thefield insulating film 105. The first high dielectric constant insulatingfilm 215 may be formed on the third oxide film 135.

The first high dielectric constant insulating film 215 may comprise, forexample, one or more of silicon oxynitride, silicon nitride, hafniumoxide, hafnium silicon oxide, lanthanum oxide, lanthanum aluminum oxide,zirconium oxide, zirconium silicon oxide, tantalum oxide, titaniumoxide, barium strontium titanium oxide, barium titanium oxide, strontiumtitanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalumoxide or lead zinc niobate.

The first high dielectric constant insulating film 215 may be formed by,for example, physical vapor deposition (PVD), chemical vapor deposition(CVD), atomic layer deposition (ALD) or a combination thereof.

A first gate electrode 220 may be formed by filling the second trench2102 with a conductive material. The first gate electrode 220 may extendin the second direction Y1 to intersect the third fin-shaped pattern130. The first gate electrode 220 may be formed on the third fin-shapedpattern 130 with the first high dielectric constant insulating film 215therebetween.

The first gate electrode 220 may include metal layers 221, 222. Asillustrated, the first gate electrode 220 may be formed by lamination ofthe two or more metal layers 221, 222. The first metal layer 221 mayserve to adjust a work function, and the second metal layer 222 mayserve to fill a space formed by the first metal layer 221.

The first metal layer 221 may comprise, for example, at least one ofTiN, WN, TiAl, TiAlN, TaN, TiC, TaC, TaCN, TaSiN or a combinationthereof. The second metal layer 222 may comprise, for example, at leastone of W, Al, Cu, Co, Ti, Ta, poly-Si, SiGe or a metal alloy.

FIGS. 15 to 17B are intermediate-stage diagrams that illustrate a methodfor fabricating a semiconductor device according to another embodimentof the inventive concepts. For convenience of description, the followingdiscussion will primary focus on differences between the embodiment ofFIGS. 1 to 14C and the embodiment of FIGS. 15 to 17B.

For reference, FIG. 17B is a cross-sectional view taken along a line A-Aof FIG. 17A. FIG. 15 illustrates a process that may be performed afterthe processes of FIGS. 1-7.

Referring to FIG. 15, the second oxide film 125 may be formed along theprofile of the exposed portion of the second fin-shaped pattern 120. Thesecond oxide film 125 may be formed by oxidizing the exposed part of thesecond fin-shaped pattern 120.

The second oxide film 125 may be formed along the profile of the upperpart 121 of the second fin-shaped pattern 120 that protrudes above theupper surface of the field insulating film 105.

The second oxide film 125 may be formed by, for example, chemicaloxidation, UV oxidation, dual plasma oxidation, thermal oxidation,chemical vapor deposition or atomic layer deposition.

Referring to FIG. 16, the second oxide film 125 may be removed to form afourth fin-shaped pattern 140 which protrudes above the upper surface ofthe field insulating film 105.

The second oxide film 125 may be removed using an etching process or thelike. The second oxide film 125 may be removed using, for example, achemical oxide removal (COR), Siconi or descum.

The fourth fin-shaped pattern 140 may include a lower part 142 and anupper part 141 that is above the lower part 142. The lower part 142 ofthe fourth fin-shaped pattern may directly contact the field insulatingfilm 105 and may be surrounded by the field insulating film 105. Theupper part 141 of the fourth fin-shaped pattern may not directly contactthe field insulating film 105.

A width of the fourth fin-shaped pattern 140 at a height H1 above thelowermost part of the fourth fin-shaped pattern 140 may be a fourthwidth W4. The width W4 of the fourth fin-shaped pattern 140 may benarrower than the width W2 of the second fin-shaped pattern 120 and thewidth W11 of the first fin-shaped pattern 110 after rounding.

In other words, the width W4 of the upper part 141 of the fourthfin-shaped pattern 140 may be narrower than the width W2 of the secondfin-shaped pattern 120 and the width W11 of the first fin-shaped pattern110 after rounding.

With reference to FIGS. 15 and 16, the fourth fin-shaped pattern 140 maybe formed by removing a portion of the upper part 121 of the secondfin-shaped pattern 120.

In other words, in the course of forming and removing the second oxidefilm 125, the profile of the sidewall 120S of the second fin-shapedpattern 120 changes. Therefore, the fourth fin-shaped pattern 140 can beformed by modifying the profile of the sidewall 120S of the secondfin-shaped pattern 120.

The sidewall of the fourth fin-shaped pattern 140S may include a thirdinflection point 140P.

Referring to FIGS. 17A and 17B, a fourth oxide film 145 may be formedalong the profile of the fourth fin-shaped pattern 140. The fourth oxidefilm 145 may be formed along the profile of the upper part 141 of thefourth fin-shaped pattern 140 that protrudes above the upper surface ofthe field insulating film 105.

The fourth oxide film 145 may be formed by oxidizing a portion of theupper part 141 of the fourth fin-shaped pattern 140.

The fourth oxide film 145 may be formed by, for example, chemicaloxidation, UV oxidation, dual plasma oxidation, thermal oxidation,chemical vapor deposition, atomic layer deposition or the like.

Subsequently, a first dummy gate electrode 205 may be formed. Inparticular, a dummy gate electrode layer may be formed, and a maskpattern 2002 may be formed on the first dummy gate electrode layer. Thefirst dummy gate electrode layer may then be etched using the mask 2002as an etching mask to form the first dummy gate electrode 205. The firstdummy gate electrode 205 may extend in the second direction Y1 tointersect the fourth fin-shaped pattern 140.

The first dummy gate electrode 205 is formed on the fourth fin-shapedpattern 140. The first dummy gate electrode 205 may be formed on thefourth oxide film 145 which is formed along the profile of the upperpart 141 of the fourth fin-shaped pattern 140.

In FIGS. 17A and 17B, the fourth oxide film 145 is illustrated as beingexposed on both sides of the first dummy gate electrode 205, butembodiments of the inventive concepts are not limited thereto. Forexample, in other embodiments, during the etching process for formingthe first dummy gate electrode 205, portions of the fourth oxide film145 that do not vertically overlap the first dummy gate electrode 205may be removed.

Subsequently, the first gate electrode 220 can be formed through theprocesses described above with reference to FIGS. 9A to 14C. Duringthese processes, the third fin-shaped pattern 130 can be formed byremoving the fourth oxide film 145 which is formed along the profile ofthe fourth fin-shaped pattern 140.

FIGS. 18 to 30 are intermediate-stage diagrams that illustrate a methodfor fabricating a semiconductor device according to still anotherembodiment of the inventive concepts. For convenience of description,the following discussion will mainly focus on differences fromembodiment described above with reference to FIGS. 1 to 14C.

For reference, FIGS. 19 to 26 illustrate processes that are performedafter FIG. 18 in a cross-section taken along a line A-A and a line C-Cof FIG. 18. FIGS. 29 and 30 illustrate processes that are performedafter FIG. 28A in a cross-section taken along a line A-A and a line C-Cof FIG. 28A. FIG. 27B is a cross-sectional view taken along a line A-Aand a line C-C of FIG. 27A, and FIG. 28B is a cross-sectional view takenalong a line A-A and a line C-C of FIG. 28A.

Referring to FIG. 18, first mask patterns 2001 may be formed on thesubstrate 100. The first mask patterns 2001 may extend in the firstdirection X1 on a first region I and may extend in the third directionX2 on a second region II.

The substrate 100 can include the first region I and the second regionII. The first region I and the second region II may be regions that arespaced apart from each other or may be regions that are connected toeach other.

Referring to FIG. 19, a first trench 2101 and a third trench 2103 may beformed in the substrate 100 by etching portions of the substrate 100that are not covered by the first mask patterns 2001. The first trench2101 may be formed in the first region I, and the third trench 2103 maybe formed in the second region II.

By etching a part of the substrate 100, first fin-shaped patterns 110may be formed in the first region I of the substrate 100, and fifthfin-shaped patterns 310 may be formed in the second region II of thesubstrate 100.

Because the fin-shaped patterns are formed using the first mask patterns2001 as an etching mask, the first fin-shaped patterns 110 extend in thefirst direction X1, and the fifth fin-shaped patterns 310 extend in thethird direction X2.

The first mask patterns 2001 may remain on the first fin-shaped patterns110 and on the fifth fin-shaped patterns 310.

Referring to FIG. 20, the field insulating film 105 can be formed on asubstrate 100. A part of the first fin-shaped pattern 110 and a part ofthe fifth fin-shaped pattern 310 may protrude above the upper surface ofthe field insulating film 105.

The lower part of the first fin-shaped pattern 112 may directly contactthe field insulating film 105 and may be surrounded by the fieldinsulating film 105. The upper part 111 of the first fin-shaped patternmay not directly contact the field insulating film 105.

The lower part 312 of the fifth fin-shaped pattern 310 may directlycontact the field insulating film 105 and may be surrounded by the fieldinsulating film 105. The upper part 311 of the fifth fin-shaped patternmay not directly contact the field insulating film 105.

A width of the first fin-shaped pattern 110 at a height H above theupper surface of the field insulating films 105 may be W1, and the widthof the fifth fin-shaped pattern 310 may be W5. In other words, at aheight H1 above the lowermost part of the first fin-shaped pattern 110,the width of the first fin-shaped pattern 110 may be a first width W1,and the width of the fifth fin-shaped pattern 310 may be a fifth widthW5 at the same height H1.

The fifth fin-shaped pattern 310 includes an upper surface 310U, asidewall 310S, and a corner portion 310C where the upper surface 310Sand the sidewall 310C meet. As shown in FIG. 20, the corner portion 310Cmay have an angular shape.

Referring to FIG. 21, through the etching process, the first fin-shapedpattern 110 may be etched to round the corner portion 110C thereof, andthe fifth fin-shaped pattern 310 may be etched to round the cornerportion 310C thereof.

A corrected fifth width of the fifth fin-shaped pattern 310 having therounded corner portion at a height H1 above the lowermost part of thefifth fin-shaped pattern 310 may be W51.

In FIGS. 20 and 21, it has been described that at a height H1 above thelowermost part of the first fin-shaped pattern 110, the width W1 of thefirst fin-shaped pattern 110 before the rounding of the corner portionis substantially the same as the width W11 of the first fin-shapedpattern 110 after the rounding of the corner portion, and at a height H1above the lowermost part of the fifth fin-shaped pattern 310, the widthW5 of the fifth fin-shaped pattern 310 before the rounding of the cornerportion is substantially the same as the width W51 of the fifthfin-shaped pattern 310 after the rounding of the corner portion, but itwill be appreciated that embodiments of the inventive concepts are notlimited thereto.

Referring to FIG. 22, the first oxide film 115 may be formed along theprofile of the first fin-shaped pattern 110, and a fifth oxide film 315may be formed along the profile of the fifth fin-shaped pattern 310.

The fifth oxide film 315 may be formed along the profile of the upperpart 311 of the fifth fin-shaped pattern that protrudes above the uppersurface of the field insulating film 105 and that includes the roundedcorner portion.

The first oxide film 115 may be formed by oxidizing a portion of thefirst fin-shaped pattern 110, and the fifth oxide film 315 may be formedby oxidizing a portion of the fifth fin-shaped pattern 310.

The first oxide film 115 and the fifth oxide film 315 may be formed by,for example, chemical oxidation, UV oxidation, dual plasma oxidation,thermal oxidation, chemical vapor deposition, atomic layer deposition orthe like.

Referring to FIG. 23, the second fin-shaped pattern 120 may be formed inthe first region I by removing the first oxide film 115, and the sixthfin-shaped pattern 320 may be formed in the second region II by removingthe fifth oxide film 315.

The first oxide film 115 and the fifth oxide film 315 may be removedusing an etching process. The first oxide film 115 and the fifth oxidefilm 315 may be removed by, for example, a chemical oxide film removal(COR), Siconi or descum.

The lower part of the sixth fin-shaped pattern 322 may directly contactthe field insulating film 105 and may be surrounded by the fieldinsulating film 105. The upper part 321 of the sixth fin-shaped patternmay not directly contact the field insulating film 105.

A width of the sixth fin-shaped pattern 320 at a height H1 above thelowermost part of the sixth fin-shaped pattern 320, may be a sixth widthW6. The sixth width W6 of the sixth fin-shaped pattern 320 may benarrower than the fifth width W5 of the fifth fin-shaped pattern 310before the rounding and the width W51 of the fifth fin-shaped pattern310 after the rounding.

With reference to FIGS. 22 and 23, the second fin-shaped pattern 120 andthe sixth fin-shaped pattern 320 may be formed by removing respectiveportions of the first fin-shaped pattern 110 and of the fifth fin-shapedpattern 310. Specifically, the second fin-shaped pattern 120 and thesixth fin-shaped pattern 320 may be formed by removing respectiveportions of the upper part 111 of the first fin-shaped pattern and ofthe upper part 311 of the fifth fin-shaped pattern.

In the course of forming and removing the first oxide film 115 and thefifth oxide film 315, the profiles of the sidewall 110S of the firstfin-shaped pattern and the sidewall 310S of the fifth fin-shaped patternchange. In particular, the sidewall 320S of the sixth fin-shaped patternmay include a fourth inflection point 320P.

Referring to FIG. 24, the second oxide film 125 may be formed along theprofile of the second fin-shaped pattern 120, and a sixth oxide film 325may be formed along the profile of the sixth fin-shaped pattern 320. Thesecond oxide film 125 and the sixth oxide film 325 may be formed alongthe respective profiles of the upper part 121 of the second fin-shapedpattern and the upper part 321 of the sixth fin-shaped pattern thatprotrude above the upper surface of the field insulating film 105.

The second oxide film 125 may be formed by oxidizing a portion of theupper part 121 of the second fin-shaped pattern, and the sixth oxidefilm 325 may be formed by oxidizing a portion of the upper part 321 ofthe sixth fin-shaped pattern.

Subsequently, a third mask pattern 2003 may be formed to cover thesecond fin-shaped pattern 120 on the first region I of the substrate100. The second oxide film 125 is also covered by the third mask pattern2003.

Since the third mask pattern 2003 is formed on the first region I, thesixth fin-shaped pattern 320 and the sixth oxide film 325 may be exposedby the third mask pattern 2003.

Referring to FIG. 25, the sixth oxide film 325 may be removed via anetching process using the third mask pattern 2003 as an etching mask. Byremoving the sixth oxide film 325, a seventh fin-shaped pattern 330 maybe formed on the second region II. The sixth oxide film 325 may beremoved using, for example, a chemical oxide removal (COR), Siconi ordescum.

The seventh fin-shaped pattern 330 may include a lower part 332 and anupper part 331 that is above the lower part 332. The lower part 332 ofthe seventh fin-shaped pattern 330 may directly contact the fieldinsulating film 105 and may be surrounded by the field insulating film105. The upper part 331 of the seventh fin-shaped pattern may notdirectly contact the field insulating film 105.

A width of the seventh fin-shaped pattern 330 at a height H1 above thelowermost part 330 of the seventh fin-shaped pattern may be a seventhwidth W7. The width W7 of the seventh fin-shaped pattern 330 may benarrower than the sixth width W6 of the sixth fin-shaped pattern 320 andthe width W51 of the fifth fin-shaped pattern 310 after the rounding.

In other words, the width W7 of the upper part 331 of the seventhfin-shaped pattern can be narrower than the width W6 of the sixthfin-shaped pattern 320 and the width W51 of the fifth fin-shaped pattern310 after the rounding.

With reference to FIGS. 24 and 25, a seventh fin-shaped pattern 330 maybe formed by removing a portion of the sixth fin-shaped pattern 320.Specifically, the seventh fin-shaped pattern 330 may be formed byremoving a part of the upper part 321 of the sixth fin-shaped pattern330.

In the course of forming and removing the sixth oxide film 325, theprofile of the sidewall 320S of the sixth fin-shaped pattern changes.Therefore, the seventh fin-shaped pattern 330 can be formed by modifyingthe profile of the sidewall 320S of the sixth fin-shaped pattern 320.

The sidewall 330S of the seventh fin-shaped pattern 330 may include afifth inflection point 330P.

Referring to FIG. 26, a seventh oxide film 335 may be formed along theprofile of the seventh fin-shaped pattern 330. The seventh oxide film335 may be formed along the profile of the upper part 331 of the seventhfin-shaped pattern 330 that protrudes above the upper surface of thefield insulating film 105.

The seventh oxide film 335 may be formed by oxidizing a part of theseventh fin-shaped pattern 330. For example, the seventh oxide film 335may be formed by oxidizing a part of the upper part 331 of the seventhfin-shaped pattern 330.

The seventh oxide film 335 may be formed using, for example, chemicaloxidation, UV oxidation, dual plasma oxidation, thermal oxidation,chemical vapor deposition or atomic layer deposition.

Subsequently, the third mask pattern 2003 may be removed to expose thesecond fin-shaped pattern 120 having the second oxide film 125 thereon.

In FIGS. 24 to 26, the third mask pattern 2003 has been described asbeing formed after forming the second oxide film 125 and the sixth oxidefilm 325, but embodiments of the inventive concepts are not limitedthereto.

Unlike FIGS. 24 to 26, it is possible to form the third mask pattern2003 without forming the second oxide film 125 and the sixth oxide film325. In such a case, after forming the seventh fin-shaped pattern 330while changing the profile of the sidewall 320S of the sixth fin-shapedpattern 320, the third mask pattern 2003 is removed. After removing thethird mask pattern 2003, the second oxide film 125 and the seventh oxidefilm 335 may be formed along the profile of the second fin-shapedpattern 120 and the profile of the seventh fin-shaped pattern 330,respectively.

Referring to FIGS. 27A and 27B, a first dummy gate electrode 205 and asecond dummy gate electrode 405 may be formed. In particular, a dummygate electrode layer may be formed, and a mask pattern 2002 may beformed on the first dummy gate electrode layer. The first dummy gateelectrode layer may then be etched using the mask 2002 as an etchingmask to form the first dummy gate electrode 205 on the first region Iand to form the second dummy gate electrode 405 on the second region II.The first dummy gate electrode 205 may extend in the second direction Y1to intersect the second fin-shaped pattern 120, and the second dummygate electrode 405 may extend in the fourth direction Y2 to intersectthe seventh fin-shaped pattern 330.

The first dummy gate electrode 205 may be formed on the second oxidefilm 125 that is formed along the profile of the upper part 121 of thesecond fin-shaped pattern 120, and the second dummy gate electrode 405may be formed on the seventh oxide film 335 that is formed along theprofile of the upper part 331 of the seventh fin-shaped pattern 330.

In FIGS. 27A and 27B, it has been illustrated that the second oxide film125 is exposed on both sides of the first dummy gate electrode 205extending in the second direction Y1 and the seventh oxide film 335 isexposed on both sides of the second dummy gate electrode 405 extendingin the fourth direction Y2, but embodiments of the inventive conceptsare not limited thereto.

Subsequently, as described in FIGS. 9A to 11B, sources/drains are formedon both sides of the first dummy gate electrode 205 and on both sides ofthe second dummy gate electrode 405, respectively. Thereafter, the etchstop film 170 and the interlayer insulating film 180 are formed.

Subsequently, the interlayer insulating film 180 may be planarized untilthe upper surface of the first dummy gate electrode 205 and the uppersurface of the second dummy gate electrode 405 are exposed.

Referring to FIGS. 28A and 28B, the second trench 2102 extending in thesecond direction Y1 may be formed by removing the first dummy gateelectrode 205, and a fourth trench 2104 extending in the fourthdirection Y2 may be formed by removing the second dummy gate electrode405.

As the fourth trench 2104 is formed, the field insulating film 105 maybe exposed, and the seventh oxide film 335 formed along the profile ofthe upper part 331 of the seventh fin-shaped pattern 330 may be exposed.That is, the seventh oxide film 335 exposed by the fourth trench 2104may be a portion which vertically overlaps the second dummy gateelectrode 405.

Referring to FIG. 29, by removing the second oxide film 125 and theseventh oxide film 335, a third fin-shaped pattern 130 and an eighthfin-shaped pattern 340 are formed that protrude above the upper surfaceof the field insulating film 105.

Specifically, the third fin-shaped pattern 130 may be formed by removinga portion of the second oxide film 125 that is exposed by the secondtrench 2102, and the eighth fin-shaped pattern 340 may be formed byremoving a portion of the seventh oxide film 335 that is exposed by thefourth trench 2104.

The second oxide film 125 and the seventh oxide film 335 can be removedusing, for example, a chemical oxide removal (COR), Siconi or descum.

A lower part 342 of the eighth fin-shaped pattern may directly contactthe field insulating film 105 and may be surrounded by the fieldinsulating film 105. An upper part 341 of the eighth fin-shaped patternmay not directly contact the field insulating film 105.

A width of the eighth fin-shaped pattern 340 at a height H1 above thelowermost part of the eighth fin-shaped pattern 340 may be an eighthwidth W8. The width W8 of the eighth fin-shaped pattern 340 may benarrower than the width W7 of the seventh fin-shaped pattern 330 and maybe narrower than the width W6 of the sixth fin-shaped pattern 320.

The eighth fin-shaped pattern 340 may be formed by removing a portion ofthe upper part 331 of the seventh fin-shaped pattern 330.

In the course of forming and removing the seventh oxide film 335, theprofile of the sidewall 330S of the seventh fin-shaped pattern changes.Therefore, the eighth fin-shaped pattern 340 may be formed by modifyingthe profile of the sidewall 330S of the seventh fin-shaped pattern 330.The eighth fin-shaped pattern 340 may be formed by modifying the profileof the sidewall 330S of the seventh fin-shaped pattern 330 thatvertically overlaps the second dummy gate electrode 405.

The sidewall 340S of the eighth fin-shaped pattern 340 may include asixth inflection point 340P.

In the above-described process, the third fin-shaped pattern 130 isformed through two modifying processes of the sidewall profile, and theeighth fin-shaped pattern 340 is formed through three modifyingprocesses of the sidewall profile.

As illustrated in the drawings, each time the modifying process of thesidewall profile is performed, the width and height of the fin-shapedpattern that protrudes above the upper surface of the field insulatingfilm 105 decrease.

The width W1 of the first fin-shaped pattern 110 is assumed to besubstantially the same as the width W5 of the fifth fin-shaped pattern310, and the height of the upper part 111 of the first fin-shapedpattern is assumed to be substantially the same as the height of theupper part 311 of the fifth fin-shaped pattern 310.

At this time, since the number of modifying process of the sidewallprofile for forming the third fin-shaped pattern 130 is different fromthe number of modifying process of the sidewall profile for forming theeighth fin-shaped pattern 340, the width W3 of the third fin-shapedpattern 130 may be different from the width W8 of the eighth fin-shapedpattern 340. For example, the width W3 of the third fin-shaped pattern130 may be greater than the width W8 of the eighth fin-shaped pattern340.

Further, the height H2 of the upper part 131 of the third fin-shapedpattern 130 may be different from the height H3 of the upper part 341 ofthe eighth fin-shaped pattern 340. For example, the height H2 of theupper part of the third fin-shaped pattern 131 may be higher than theheight H3 of the upper part 341 of the eighth fin-shaped pattern 340.

In addition, the slope 130S of the sidewall of the upper part 131 of thethird fin-shaped pattern 130 of the portion higher than the secondinflection point 130P may be different from the slope 340S of thesidewall of the upper part 341 of the eighth fin-shaped pattern 340 ofthe portion higher than the sixth inflection point 340P, where in eachcase the slope is measured with respect to the upper surface of thesubstrate 100. For example, the slope 130S of the sidewall of the upperpart 131 of the third fin-shaped pattern 130 of the portion higher thanthe second inflection point 130P may be smaller than the slope 340S ofthe sidewall of the upper part 341 of the eighth fin-shaped pattern 340of the portion higher than the sixth inflection point 340P.

That is, the slope 340S of the sidewall of the upper part 341 of theeighth fin-shaped pattern 340 of the portion higher than the sixthinflection point 340P can be nearly vertical as compared to the slope130S of the sidewall of the upper part 131 of the third fin-shapedpattern 130 of the portion higher than the second inflection point 130P.

Referring to FIG. 30, the third oxide film 135 may be formed along theprofile of the third fin-shaped pattern 130 that is exposed by thesecond trench 2102. The eighth oxide film 135 may be formed along theprofile of the eighth fin-shaped pattern 340 that is exposed by thefourth trench 2104.

Subsequently, a first high dielectric constant insulating film 215 isformed along the sidewall and the bottom surface of the second trench2102, and a second high dielectric constant insulating film 415 isformed along the sidewall and the bottom surface of the fourth trench2104.

The second high dielectric constant insulating film 415 may be formedalong the profiles of the field insulating film 105 and the portion ofthe eighth fin-shaped pattern 340 that protrudes above the fieldinsulating film 105. The second high dielectric constant insulating film415 may be formed on the eighth oxide film 345.

Subsequently, the first gate electrode 220 may be formed by filling thesecond trench 2102 with a conductive material, and the second gateelectrode 420 may be formed by filling the fourth trench 2104 with theconductive material.

The first gate electrode 220 may be formed on the third fin-shapedpattern 130 that has the first high dielectric constant insulating film215 thereon, and the second gate electrode 420 may be formed on theeighth fin-shaped pattern 340 that has the second high dielectricconstant insulating film 415 thereon.

FIG. 31 is a block diagram of a memory card which includes asemiconductor device fabricated according to embodiments of theinventive concepts.

Referring to FIG. 31, a memory 1210 that includes one or moresemiconductor devices that are fabricated according to embodiments ofthe inventive concepts can be included in a memory card 1200. The memorycard 1200 can include a memory controller 1220 which controls the dataexchange between a host 1230 and the memory 1210. A SRAM 1221 can beused as an operation memory of a central processing unit 1222. A hostinterface 1223 can include a protocol for connecting the host 1230 tothe memory card 1200 to exchange data. An error correction code 1224 candetect and correct errors in the data that is read from the memory 1210.A memory interface 1225 can interface with the memory 1210. The centralprocessing unit 1222 can perform the overall control operationassociated with the data exchange of the memory controller 1220.

FIG. 32 is a block diagram of an information processing system thatincludes one or more semiconductor devices according to embodiments ofthe inventive concepts.

Referring to FIG. 32, an information processing system 1300 can includea memory system 1310 which includes the semiconductor devices fabricatedaccording to embodiments of the inventive concepts. The informationprocessing system 1300 can include a memory system 1310, a modem 1320, acentral processing unit 1330, a RAM 1340 and a user interface 1350 thatare electrically connected to a system bus 1360. The memory system 1310can include a memory 1311 and a memory controller 1312 and can havesubstantially the same configuration as that of the memory card 1200illustrated in FIG. 31. The data processed by the central processingunit 1330 or the data received from an external device can be stored inthe memory system 1310. The information processing system 1300 can beapplied to a memory card, a SSD, a camera image sensor and various otherchipsets. For example, the memory system 1310 can be configured to adoptthe SSD, and in this case, the information processing system 1300 canreliably and stably process a large-capacity data.

FIG. 33 is a block diagram of an electronic device that includes one ormore semiconductor devices according to embodiments of the inventiveconcepts.

Referring to FIG. 33, an electronic device 1400 can include thesemiconductor devices according to embodiments of the inventiveconcepts. The electronic device 1400 can be used for a wirelesscommunication device (e.g., a PDA, a notebook computer, a laptopcomputer, a web tablet, a wireless telephone and/or a wireless digitalmusic player) or various devices which transmit and receive informationin a wireless communication environment.

The electronic device 1400 can include a controller 1410, aninput/output device 1420, a memory 1430 and a wireless interface 1440.Here, the memory 1430 can include a semiconductor device fabricatedaccording to embodiments of the inventive concepts. The controller 1410can include a microprocessor, a digital signal processor or a similarprocessor. The memory 1430 can be used to store the commands (or userdata) which are processed by the controller 1410. The wireless interface1440 can be used to transmit and receive the data through the wirelessdata network. The wireless interface 1440 can include an antenna and/ora wireless transceiver. The electronic device 1400 can utilize, forexample, a third generation communication system protocol, such as aCDMA, a GSM, a NADC, an E-TDMA, a WCDMA and a CDMA 2000.

While the inventive concepts have been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeof the inventive concepts as defined by the following claims. It istherefore desired that the present embodiments be considered in allrespects as illustrative and not restrictive, reference being made tothe appended claims rather than the foregoing description to indicatethe scope of the inventive concepts.

What is claimed is:
 1. A method for fabricating a semiconductor device,the method comprising: forming a first fin-shaped pattern that includesan upper part and a lower part on a substrate; removing a portion of theupper part of the first fin-shaped pattern so as to reduce a width ofthe upper part of the first fin-shaped pattern at a first height abovean upper surface of the substrate in order to form a second fin-shapedpattern; forming a dummy gate electrode that intersects the secondfin-shaped pattern on the second fin-shaped pattern; and removing aportion of an upper part of the second fin-shaped pattern after formingthe dummy gate electrode so as to reduce a width of the upper part ofthe second fin-shaped pattern at the first height above the uppersurface of the substrate in order to form a third fin-shaped pattern. 2.The method of claim 1, wherein removing a portion of an upper part ofthe second fin-shaped pattern includes forming a first oxide film alonga profile of the upper part of the first fin-shaped pattern, and thenremoving the first oxide film.
 3. The method of claim 1, whereinremoving a portion of an upper part of the second fin-shaped patternincludes: forming a second oxide film along a profile of the upper partof the second fin-shaped pattern before forming the dummy gateelectrode, and removing the second oxide film after forming the dummygate electrode.
 4. The method of claim 3, further comprising forming athird oxide film along a profile of an upper part of the thirdfin-shaped pattern by oxidizing a portion of the upper part of the thirdfm-shaped pattern.
 5. The method of claim 1, wherein the firstfin-shaped pattern includes a Sidewall, an upper surface and a cornerportion in which the sidewall and the upper surface meet, the methodfurther comprising rounding the corner portion by etching the firstfin-shaped pattern before forming the second fin-shaped pattern.
 6. Themethod of claim 1, wherein forming the first fin-shaped patternincludes: forming a fourth fin-shaped pattern including an upper partand a lower part on a substrate, forming a field insulating film thatdirectly contacts the lower part of the fourth fin-shaped and that doesnot directly contact the upper part of the fourth fin-shaped pattern,and removing a portion of the upper part of the fourth fin-shapedpattern after forming the field insulating film.
 7. The method of claim6, wherein forming the first fin-shaped pattern includes: forming anoxide film along a profile of the upper part of the fourth tin-shapedpattern, and removing the oxide film.
 8. The method of claim 6, whereinremoving the portion of the upper part of the fourth fin-shaped patternduring the formation of the first fin-shaped pattern reduces a width ofthe upper part of the fourth fin-shaped pattern at the first height. 9.The method of claim 1, further comprising forming recesses in the secondfin-shaped pattern by etching both sides of the dummy gate electrode andthen forming source/drains in the respective recesses prior to formingthe third fin-shaped pattern.
 10. A method for fabricating asemiconductor device, the method comprising: forming a first fin-shapedpattern that has an upper part and a lower part on a substrate; forminga first oxide film along a profile of the first fin-shaped pattern byoxidizing a portion of the first fin-shaped pattern; forming a secondfin-shaped pattern by removing the first oxide film; forming a secondoxide film along a profile of the second fin-shaped pattern by oxidizinga portion of the second fin-shaped pattern; forming a first gateelectrode that intersects the second fin-shaped pattern on the secondoxide film; forming a trench exposing the second oxide film by removingthe first gate electrode; and forming a third fin-shaped pattern byremoving the second oxide film which is exposed by the trench.
 11. Themethod of claim 10, wherein forming the first fin-shaped patternincludes forming a field insulating film on the substrate, the fieldinsulating film directly contacting the lower part of the firstfin-shaped pattern and not directly contacting the upper part of thefirst fin-shaped pattern.
 12. The method of claim 11, furthercomprising: etching a corner portion of the first fin-shaped pattern atwhich an upper surface and a sidewall of the first fin-shaped patternmeet to round the corner portion of the first fin-shaped pattern priorto forming the first oxide film.
 13. The method of claim 10, whereinforming the first fin-shaped pattern includes forming a fourthfin-shaped pattern that has an upper part and a lower part on thesubstrate; forming a field insulating film which directly contacts thelower part of the fourth fin-shaped pattern and which does not directlycontact the upper part of the fourth fin-shaped pattern; forming afourth oxide film along a profile of the fourth fin-shaped pattern byoxidizing a part of the fourth fin-shaped pattern after forming thefield insulating film; and removing the fourth oxide film.
 14. Themethod of claim 13, wherein oxidizing the part of the fourth fin-shapedpattern during the formation of the first fin-shaped pattern reduces awidth of the upper part of the fourth fin-shaped pattern at a firstheight above a lower surface of the substrate and wherein oxidizing theportion of the first fin-shaped pattern reduces a width of the upperpart of the first fin-shaped pattern at the first height above the lowersurface of the substrate.
 15. A method of fabricating a semiconductordevice, the method comprising: forming a first fin-shaped pattern on asubstrate; converting an outer portion of an upper part of the firstfin-shaped pattern into a first oxide film so as to reduce a width ofthe upper part of the first fin-shaped pattern at a first height above alower surface of the substrate and so as to reduce a height of the firstfin-shaped pattern above an upper surface of the substrate; forming asecond fin-shaped pattern by removing the first oxide film; convertingan outer portion of an upper part of the second fin-shaped pattern intoa second oxide film so as to reduce a width of the upper part of thesecond fin-shaped pattern at the first height above the lower surface ofthe substrate and so as to reduce a height of the second fin-shapedpattern above the upper surface of the substrate; and forming a thirdfin-shaped pattern by removing at least a portion of the second oxidefilm.
 16. The method of claim 15, wherein the third fin-shaped patternextends in a first direction, the method further comprising: forming afield insulating film that covers sidewalls of a lower part of the firstfin-shaped pattern prior to forming the second fin-shaped pattern; andforming an electrode structure on the substrate that extends in a firstdirection that crosses the first direction after forming the secondfin-shaped pattern.
 17. The method of claim 15, wherein a width of alower part of the third fin-shaped pattern is greater than a width of anupper part of the third fin-shaped pattern and equal to a width of alower part of the second fin-shaped pattern.
 18. The method of claim 15,the method further comprising: forming a dummy gate electrode thatintersects the second fin-shaped pattern; forming spacers on sidewallsof the dummy gate electrode and on the second oxide film, and whereinremoving at least the portion of the second oxide film comprisesremoving the portion of the second oxide film that is exposed by thespacers.
 19. The method of claim 15, further comprising rounding cornerportions of at least one of the first through third fin-shaped patterns.